HY19P03D
HUAYI(华羿微)
TO-252-2
¥0.74152
42,036
场效应管(MOSFET)
数量:1个P沟道,漏源电压(Vdss):30V,连续漏极电流(Id):90A,导通电阻(RDS(on)):8mΩ@4.5V,45A
厂家型号
厂牌
封装
价格(含税)
库存
批次
交期
渠道
HY19P03D
HUAYI(华羿微)
TO-252

2500+:¥0.74152

1+:¥0.8008

3453

25+
1-2工作日发货
HY19P03D
HUAYI(华羿微)
TO-252-2

5000+:¥0.7483

2500+:¥0.7709

500+:¥0.9121

150+:¥1.049

50+:¥1.2026

5+:¥1.5171

28265

-
立即发货
HY19P03D
HUAYI

2500+:¥0.7843

1250+:¥0.847

100+:¥0.9999

40+:¥1.309

3461

-
3天-15天
HY19P03D
HUAYI(华羿微)
TO-252

2500+:¥0.82

500+:¥0.99

50+:¥1.08

5+:¥1.38

5000

23+/24+
HY19P03D
HUAYI(华羿微)
TO-252(DPAK)

2500+:¥0.8223

1000+:¥0.9631

500+:¥0.9729

50+:¥1.2828

5+:¥1.6183

1829

-
立即发货

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价格趋势
规格参数
属性 属性值
数量 1个P沟道
漏源电压(Vdss) 30V
连续漏极电流(Id) 90A
导通电阻(RDS(on)) 8mΩ@4.5V,45A