咨询/建议
HY19P03D
HUAYI(华羿微)
TO-252-2
场效应管(MOSFET)
数量：1个P沟道，漏源电压(Vdss)：30V，连续漏极电流(Id)：90A，导通电阻(RDS(on))：8mΩ@4.5V,45A
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厂家型号
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厂牌
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封装
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价格(含税)
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库存
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批次
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交期
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渠道
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HY19P03D
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HUAYI(华羿微)
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TO-252
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2500+:￥0.74152 1+:￥0.8008 |
3453 |
25+
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1-2工作日发货
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硬之城
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HY19P03D
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HUAYI(华羿微)
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TO-252-2
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5000+:￥0.7483 2500+:￥0.7709 500+:￥0.9121 150+:￥1.049 50+:￥1.2026 5+:￥1.5171 |
28265 |
-
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立即发货
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立创商城
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HY19P03D
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HUAYI
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2500+:￥0.7843 1250+:￥0.847 100+:￥0.9999 40+:￥1.309 |
3461 |
-
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3天-15天
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唯样商城
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HY19P03D
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HUAYI(华羿微)
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TO-252
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2500+:￥0.82 500+:￥0.99 50+:￥1.08 5+:￥1.38 |
5000 |
23+/24+
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在芯间
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HY19P03D
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HUAYI(华羿微)
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TO-252(DPAK)
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2500+:￥0.8223 1000+:￥0.9631 500+:￥0.9729 50+:￥1.2828 5+:￥1.6183 |
1829 |
-
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立即发货
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华秋商城
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HY19P03D
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HUAYI(华羿微)
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TO-252
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5+:￥1.53735 |
28 |
-
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现货
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硬之城
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HY19P03D
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HUAYI(华羿微)
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TO-252-2L
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2500+:￥0.713 1+:￥0.77 |
5017 |
25+
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立即发货
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圣禾堂
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HY19P03D
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HUAYI(华羿微)
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TO-252
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2500+:￥0.74152 1250+:￥0.8008 100+:￥0.94536 1+:￥1.2376 |
5017 |
--
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1-3工作日
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硬之城
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价格趋势
规格参数
| 属性 | 属性值 |
|---|---|
| 数量 | 1个P沟道 |
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 90A |
| 导通电阻(RDS(on)) | 8mΩ@4.5V,45A |