BSS169H6327
Infineon(英飞凌)
SOT-23
¥0.3325
243,236
场效应管(MOSFET)
数量:1个N沟道,漏源电压(Vdss):100V,连续漏极电流(Id):170mA,导通电阻(RDS(on)):12Ω@10V,0.17A
厂家型号
厂牌
封装
价格(含税)
库存
批次
交期
渠道
BSS169H6327
Infineon(英飞凌)
SOT-23

6000+:¥0.3325

3000+:¥0.3444

500+:¥0.3618

150+:¥0.4333

50+:¥0.4971

5+:¥0.621

194345

-
立即发货
BSS169H6327
Infineon(英飞凌)
SOT-23

1000+:¥0.3604

500+:¥0.3774

100+:¥0.4114

30+:¥0.4454

1+:¥0.4624

3975

-
立即发货
BSS169H6327
Infineon(英飞凌)
SOT-23(SOT-23-3)

3000+:¥0.488

500+:¥0.518

50+:¥0.619

5+:¥0.758

11000

22+/23+
BSS169H6327
英飞凌(INFINEON)
SOT-23

30000+:¥0.561

6000+:¥0.6056

3000+:¥0.6375

800+:¥0.8925

200+:¥1.275

10+:¥2.0751

33916

-
BSS169H6327
INFINEON TECHNOLOGIES
SOT-23,SOT-23-3

3000+:¥0.3892

300+:¥0.4243

100+:¥0.4632

30+:¥0.5099

10+:¥0.6189

1+:¥0.7473

2356

25+
1-3工作日
BSS169H6327
Infineon Technologies/IR
SOT-23,SOT-23-3

1000+:¥0.391

200+:¥0.406

20+:¥0.4342

220000

25+
4-7工作日
BSS169H6327
INFINEON TECHNOLOGIES
SOT-23,SOT-23-3

1000+:¥0.3959

500+:¥0.4217

100+:¥0.4388

50+:¥0.4775

10+:¥0.5153

1+:¥0.5412

29539

2504+
1工作日
BSS169H6327
Infineon Technologies/IR
SOT-23,SOT-23-3

3000+:¥0.4111

300+:¥0.4481

100+:¥0.4892

30+:¥0.5386

10+:¥0.6537

1+:¥0.7893

4547

24+
1-3工作日
BSS169H6327
Infineon Technologies/IR
SOT-23,SOT-23-3

150000+:¥0.4303

30000+:¥0.4341

6000+:¥0.4418

3000+:¥0.4572

36000

24+
3-4工作日
BSS169H6327
Infineon Technologies/IR
SOT-23,SOT-23-3

10000+:¥0.5763

5000+:¥0.5865

1000+:¥0.6018

10+:¥0.6375

33916

-
3-5工作日
BSS169H6327
Infineon Technologies/IR
SOT-23,SOT-23-3

30000+:¥0.678

18000+:¥0.69

12000+:¥0.708

6000+:¥0.75

9000

23+
5-10工作日
BSS169H6327
Infineon Technologies/IR
SOT-23,SOT-23-3

6000+:¥1.15

3000+:¥1.18

500+:¥1.2

10+:¥1.25

145378

-
3-5工作日
BSS169H6327
Infineon(英飞凌)
SOT-23

1000+:¥0.4532

500+:¥0.4752

100+:¥0.5192

30+:¥0.5632

1+:¥0.5852

0

-
立即发货
BSS169H6327
Infineon(英飞凌)
PG-SOT-23-3

3000+:¥0.791

1+:¥0.853

0

-
立即发货

价格趋势
规格参数
属性 属性值
数量 1个N沟道
漏源电压(Vdss) 100V
连续漏极电流(Id) 170mA
导通电阻(RDS(on)) 12Ω@10V,0.17A