咨询/建议
IPT007N06N
Infineon(英飞凌)
HSOF-8
场效应管(MOSFET)
数量：1个N沟道，漏源电压(Vdss)：60V，连续漏极电流(Id)：300A，导通电阻(RDS(on))：0.75mΩ@10V,150A
|
厂家型号
|
厂牌
|
封装
|
价格(含税)
|
库存
|
批次
|
交期
|
渠道
|
|---|
|
IPT007N06N
|
Infineon(英飞凌)
|
HSOF-8
|
1000+:￥9.3 500+:￥9.63 100+:￥10.38 30+:￥14.78 10+:￥16.4 1+:￥19.0 |
1040 |
-
|
立即发货
|
立创商城
|
|
IPT007N06N
|
Infineon(英飞凌)
|
PG-HSOF-8-1
|
500+:￥9.53 100+:￥10.2 20+:￥12.3 1+:￥15.5 |
1500 |
23+/24+
|
在芯间
|
|
|
IPT007N06N
|
Infineon(英飞凌)
|
PG-HSOF-8
|
2000+:￥9.8 1+:￥10.15 |
1761 |
25+
|
立即发货
|
圣禾堂
|
|
IPT007N06N
|
英飞凌(INFINEON)
|
HSOF-8
|
20000+:￥9.944 4000+:￥10.735 2000+:￥11.3 500+:￥15.82 200+:￥22.6 10+:￥36.7815 |
8463 |
-
|
油柑网
|
|
|
IPT007N06N
|
Infineon(英飞凌)
|
PG_HSOF8_9.9X10.43MM
|
50+:￥11.1713 20+:￥12.1694 1+:￥14.025 |
50 |
-
|
立即发货
|
华秋商城
|
|
IPT007N06N
|
Infineon Technologies/IR
|
HSOF-8，PQFN-8
|
10000+:￥9.275 6000+:￥9.4378 4000+:￥9.6005 2000+:￥9.7632 |
32000 |
-
|
3-5工作日
|
云汉芯城
|
|
IPT007N06N
|
Infineon Technologies/IR
|
HSOF-8，PQFN-8
|
2000+:￥9.504 |
26000 |
24+
|
3-5工作日
|
云汉芯城
|
|
IPT007N06N
|
Infineon Technologies
|
HSOF-8，PQFN-8
|
500+:￥9.6671 100+:￥10.557 50+:￥11.2841 10+:￥12.2923 1+:￥14.1667 |
258 |
2214+
|
1工作日
|
云汉芯城
|
|
IPT007N06N
|
Infineon Technologies/IR
|
HSOF-8，PQFN-8
|
10000+:￥10.2152 5000+:￥10.396 1000+:￥10.6672 10+:￥11.3 |
8463 |
-
|
3-5工作日
|
云汉芯城
|
|
IPT007N06N
|
Infineon Technologies/IR
|
HSOF-8，PQFN-8
|
30+:￥11.4 20+:￥11.8 10+:￥12.2 |
4000 |
-
|
3-5工作日
|
云汉芯城
|
|
IPT007N06N
|
Infineon Technologies/IR
|
HSOF-8，PQFN-8
|
8000+:￥17.0987 6000+:￥17.5447 4000+:￥18.1579 2000+:￥20.5263 |
10000 |
22+
|
5-7工作日
|
云汉芯城
|
|
IPT007N06N
|
INFINEON
|
1+:￥65.7384 |
1 |
-
|
现货最快4H发
|
京北通宇
|
价格趋势
规格参数
| 属性 | 属性值 |
|---|---|
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 300A |
| 导通电阻(RDS(on)) | 0.75mΩ@10V,150A |