咨询/建议
IPD60R180P7S
Infineon(英飞凌)
TO-252-3
场效应管(MOSFET)
数量：1个N沟道，漏源电压(Vdss)：650V，连续漏极电流(Id)：11A，导通电阻(RDS(on))：180mΩ@10V,5.6A
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厂家型号
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厂牌
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封装
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价格(含税)
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库存
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批次
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交期
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渠道
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IPD60R180P7S
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Infineon(英飞凌)
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PG-TO252-3
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2500+:￥2.54 1+:￥2.66 |
3114 |
25+
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立即发货
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圣禾堂
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IPD60R180P7S
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Infineon(英飞凌)
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PG-TO252-3
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2500+:￥2.6416 1+:￥2.7664 |
3110 |
25+
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1-2工作日发货
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硬之城
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IPD60R180P7S
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Infineon(英飞凌)
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TO-252(DPAK)
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500+:￥2.9472 10+:￥4.3296 1+:￥5.4048 |
300 |
-
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立即发货
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华秋商城
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IPD60R180P7S
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英飞凌(INFINEON)
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TO-252
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25000+:￥4.356 5000+:￥4.7025 2500+:￥4.95 800+:￥6.93 200+:￥9.9 10+:￥16.1123 |
10201 |
-
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油柑网
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IPD60R180P7S
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Infineon(英飞凌)
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PG-TO252-3
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1000+:￥4.59 100+:￥5.41 20+:￥6.14 1+:￥7.47 |
220 |
21+/22+
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在芯间
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IPD60R180P7S
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Infineon(英飞凌)
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PG-TO252-3
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2500+:￥2.6416 1250+:￥2.7664 100+:￥3.0368 1+:￥3.64 |
9664 |
--
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1-3工作日
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硬之城
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IPD60R180P7S
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Infineon Technologies/IR
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PQFN-8，TO-247，TO-252
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20000+:￥2.964 10000+:￥3.016 5000+:￥3.068 2500+:￥3.25 |
10000 |
25+
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3-6工作日
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云汉芯城
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IPD60R180P7S
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Infineon Technologies
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PQFN-8，TO-247，TO-252
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1000+:￥3.831 500+:￥3.9608 100+:￥4.0667 50+:￥4.3853 10+:￥4.7413 1+:￥5.0833 |
1369 |
2507+
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1工作日
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云汉芯城
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IPD60R180P7S
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Infineon Technologies/IR
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PQFN-8，TO-247，TO-252
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125000+:￥3.8658 62500+:￥3.9 12500+:￥3.9342 2500+:￥4.0026 |
2500 |
-
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5-8工作日
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云汉芯城
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IPD60R180P7S
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Infineon Technologies/IR
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PQFN-8，TO-247，TO-252
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10000+:￥4.4748 5000+:￥4.554 1000+:￥4.6728 10+:￥4.95 |
10201 |
-
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3-5工作日
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云汉芯城
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IPD60R180P7S
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Infineon Technologies/IR
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PQFN-8，TO-247，TO-252
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10000+:￥4.856 7500+:￥4.9827 5000+:￥5.1568 2500+:￥5.8295 |
12500 |
22+
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5-7工作日
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云汉芯城
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IPD60R180P7S
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Infineon Technologies/IR
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PQFN-8，TO-247，TO-252
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7500+:￥6.156 5000+:￥6.21 2500+:￥6.264 |
20000 |
-
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5-7工作日
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云汉芯城
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IPD60R180P7S
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Infineon(英飞凌)
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TO-252-3
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30+:￥5.41 10+:￥6.14 1+:￥7.47 |
5 |
-
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立即发货
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立创商城
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IPD60R180P7S
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INFINEON
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1+:￥7.158 |
2 |
-
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现货最快4H发
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京北通宇
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价格趋势
规格参数
| 属性 | 属性值 |
|---|---|
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 11A |
| 导通电阻(RDS(on)) | 180mΩ@10V,5.6A |