咨询/建议
IPD068N10N3G
Infineon(英飞凌)
TO-252-3
场效应管(MOSFET)
数量：1个N沟道，漏源电压(Vdss)：100V，连续漏极电流(Id)：90A，导通电阻(RDS(on))：6.8mΩ@10V,90A
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厂家型号
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厂牌
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封装
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价格(含税)
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库存
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批次
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交期
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渠道
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IPD068N10N3G
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Infineon(英飞凌)
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TO252-3
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500+:￥2.59 100+:￥2.88 20+:￥3.75 1+:￥4.98 |
1560 |
22+/23+
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在芯间
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IPD068N10N3G
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Infineon(英飞凌)
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TO-252-3
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500+:￥2.59 100+:￥2.88 30+:￥3.69 10+:￥4.18 1+:￥5.15 |
721 |
-
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立即发货
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立创商城
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IPD068N10N3G
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Infineon(英飞凌)
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TO-252-2(DPAK)
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2500+:￥2.8288 1+:￥2.964 |
1837 |
22+
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1-2工作日
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硬之城
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IPD068N10N3G
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英飞凌(INFINEON)
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TO-252
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25000+:￥4.972 5000+:￥5.3675 2500+:￥5.65 800+:￥7.91 200+:￥11.3 10+:￥18.3908 |
11494 |
-
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油柑网
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IPD068N10N3G
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Infineon(英飞凌)
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PG-TO252-3
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2500+:￥2.72 1+:￥2.85 |
1879 |
22+
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立即发货
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圣禾堂
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IPD068N10N3G
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Infineon(英飞凌)
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TO-252
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50000+:￥3.0128 37500+:￥3.0352 2500+:￥3.0464 1250+:￥3.192 100+:￥3.5056 1+:￥4.2112 |
1900 |
22+
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2-4工作日
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云汉芯城
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IPD068N10N3G
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Infineon Technologies/IR
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TO-252
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25000+:￥3.2205 15000+:￥3.2775 10000+:￥3.363 5000+:￥3.5625 |
5000 |
22+
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5-10工作日
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云汉芯城
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IPD068N10N3G
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Infineon Technologies/IR
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TO-252
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7500+:￥3.54 5000+:￥3.6 2500+:￥3.75 |
7500 |
22+
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3-5工作日
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云汉芯城
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IPD068N10N3G
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INFINEON TECHNOLOGIES
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TO-252
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1000+:￥4.3944 300+:￥4.5263 100+:￥4.7065 30+:￥5.2294 10+:￥6.2841 1+:￥7.0311 |
89 |
22+
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1工作日
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云汉芯城
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IPD068N10N3G
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Infineon Technologies
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TO-252
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1000+:￥4.4706 500+:￥4.75 100+:￥4.9902 50+:￥5.2435 10+:￥5.5088 1+:￥6.0693 |
76 |
2236+
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1工作日
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云汉芯城
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IPD068N10N3G
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Infineon Technologies/IR
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TO-252
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2500+:￥5.52 |
50000 |
-
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7-15工作日
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云汉芯城
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IPD068N10N3G
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Infineon Technologies/IR
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TO-252
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1000+:￥5.75 500+:￥6.136 100+:￥6.6 10+:￥7.5 |
20000 |
-
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5-7工作日
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云汉芯城
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价格趋势
规格参数
| 属性 | 属性值 |
|---|---|
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 100V |
| 连续漏极电流(Id) | 90A |
| 导通电阻(RDS(on)) | 6.8mΩ@10V,90A |